CXDM6053N

CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: Load/Power switches Power supply converter circuits Battery powered portable equipment MARKING: FULL PART NUMBER FEATURES: Low rDS(ON) (52mΩ MAX @ VGS=4.5V) High current (ID=5.3A) Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 60 20 5.3 30 1.2 -55 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 BVDSS VGS=0, ID=250μA 60 VGS(th) VGS=VDS, ID=250μA 1.0 1.3 VSD VGS=0, IS=2.0A rDS(ON) VGS=10V, ID=5.3A 30 rDS(ON) VGS=4.5V, ID=4.7A 33 Qg(tot) VDS=30V, VGS=5.0V, ID=5.3A 8.8 Qgs VDS=30V, VGS=5.0V, ID=5.3A 1.9 Qgd VDS=30V, VGS=5.0V, ID=5.3A 3.6 Crss VDS=30V, VGS=0, f=1.0MHz 53 Ciss VDS=30V, VGS=0, f=1.0MHz 920 Coss VDS=30V, VGS=0, f=1.0MHz 49 ton VDD=30V, VGS=4.5V, ID=4.4A RG=1.0Ω, RL=6.8Ω 33 toff ...