P-Channel MOSFET
CWDM305P
SURFACE MOUNT P-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The...
Description
CWDM305P
SURFACE MOUNT P-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.
SOIC-8 CASE
MARKING CODE: C503P
APPLICATIONS: Load/Power switches Power supply converter circuits Battery powered portable equipment
FEATURES: Low rDS(ON) (83mΩ MAX @ VGS=5.0V) High current (ID=5.3A)
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VDS VGS ID IDM PD
TJ, Tstg ΘJA
30 16 5.3 21.2 2.0 -55 to +150 62.5
UNITS V V A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
rDS(ON)
VGS=10V, ID=2.7A
0.066
rDS(ON)
VGS=5.0V, ID=2.7A
0.077
gFS VDS=5.0V, ID=5.3A
11
Crss
VDS=10V, VGS=0, f=1.0MHz
50
Ciss VDS=10V, VGS=0, f=1.0MHz
500
Coss
VDS=10V, VGS=0, f=1.0MHz
60
Qg(tot)
VDD=15V, VGS=5.0V, ID=5.3A
4.7
Qgs VDD=15V, VGS=5.0V, ID=5.3A
1.4
Qgd VDD=15V, VGS=5.0V, ID=5.3A
1.7
ton V...
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