CWDM3011P

CWDM3011P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011P is a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge. SOIC-8 CASE MARKING CODE: C3011P APPLICATIONS: Load/Power switches DC-DC converter circuits Power management FEATURES: Low rDS(ON) High current Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 20 11 50 2.5 -55 to +150 50 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 1.0 1.4 VSD VGS=0, IS=2.6A rDS(ON) VGS=10V, ID=11A 12 rDS(ON) VGS=4.5V, ID=8.5A 15 Crss VDS=8.0V, VGS=0, f=1.0MHz 450 Ciss VDS=8.0V, VGS=0, f=1.0MHz 3100 Coss VDS=8.0V, VGS=0, f=1.0MHz 320 Qg(tot) VDD=15V, VGS=10V, ID=11A 80 Qgs VDD=15V, VGS=10V, ID=11A 7.0 Qgd VDD=15V, VGS=10V, ID=11A 10.1 ton VDD=15V, VGS=10V, ID=1.0A 49 toff RG=6.0Ω, RL=15Ω 330 MAX 100 1.0 3.0 1.3 20 30 UNITS nA μA V ...