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CTLDM8002A-M621 Dataheets PDF



Part Number CTLDM8002A-M621
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet CTLDM8002A-M621 DatasheetCTLDM8002A-M621 Datasheet (PDF)

CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a silicon P-Channel enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. MARKING CODE: CN TLM621 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment FEATURES: • Low rDS(on) • Low VDS(on) • Low Threshold Voltage • Fast Switching • Logic Level Comp.

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CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a silicon P-Channel enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. MARKING CODE: CN TLM621 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment FEATURES: • Low rDS(on) • Low VDS(on) • Low Threshold Voltage • Fast Switching • Logic Level Compatible • Small TLM™ 2x1mm Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA 50 50 20 280 280 1.5 1.5 0.9 -65 to +150 139 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 1.0 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=115mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Note: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2. MAX 100 1.0 500 2.5 1.5 0.15 1.3 2.5 4.0 3.0 5.0 7.0 70 15 UNITS V V V mA mA A A W °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF R2 (6-February 2015) CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX Qg(tot) VDS=25V, VGS=4.5V, ID=100mA 0.72 Qgs VDS=25V, VGS=4.5V, ID=100mA 0.25 Qgd VDS=25V, VGS=4.5V, ID=100mA 0.16 ton, toff VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω 20 TLM621 CASE - MECHANICAL OUTLINE UNITS nC nC nC ns SUGGESTED MOUNTING PADS (Dimensions in mm) *Exposed pad P connects pins 1, 2, 5, and 6 PIN CONFIGURATION w w w. c e n t r a l s e m i . c o m LEAD CODE: 1) Drain 2) Drain 3) Gate 4) Source 5) Drain 6) Drain R0 MARKING CODE: CN R2 (6-February 2015) CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS w w w. c e n t r a l s e m i . c o m R2 (6-February 2015) CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET SERVICES • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) • Bare Die Available for Hybrid Applications LIMITATIONS AND DAMAGES DISCLAIMER: In no event shall Central be liable for any collateral, indirect, punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order or contract or the use of products provided hereunder, regardless of whether Central has been advised of the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than two (2) years after the related cause of action has occurred. In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the total amount paid to Central for the specific products sold under a purchase order or contract with respect to which losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to Buyer under a purchase order or contract shall not enlarge or extend this limit. Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order or contract and that in the absence of such limitations, the material and economic terms of the purchase order or contract would be substantially different. R2 (6-February 2015) w w w. c e n t r a l s e m i . c o m .


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