isc Silicon PNP Power Transistor
2SB679
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitte...
isc Silicon
PNP Power
Transistor
2SB679
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
COB
Output Capacitance
VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -2A ; VCE= -5V
hFE-1 Classifications
R
Y
40-80
70-140
2S...