N-channel Power MOSFET
STP18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-220 package
Datasheet - production dat...
Description
STP18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
Features
Order code STP18N60DM2
VDS 600 V
RDS(on) max. 0.295 Ω
ID 12 A
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
S(3)
Order code STP18N60DM2
AM15572v1_tab
Table 1: Device summary Marking
18N60DM2
Package TO-220
Packing Tube
January 2016
DocID027674 Rev 3
This is information on a product in full production.
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Contents
Contents
STP18N60DM2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information .......................................
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