STL8N6LF6AG

STL8N6LF6AG Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL8N6LF6AG 60 V 27 mΩ 32 A 55 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL8N6LF6AG Table 1: Device summary Marking Package 8N6LF6 PowerFLAT™ 5x6 Packing Tape and reel January 2016 DocID028068 Rev 2 This is information on a product in full production. 1/14 www.st.com Contents Contents STL8N6LF6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 PowerFLAT™ 5x6 WF type R package information.........