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STH290N4F6-6AG Dataheets PDF



Part Number STH290N4F6-6AG
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STH290N4F6-6AG DatasheetSTH290N4F6-6AG Datasheet (PDF)

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Swit.

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STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6 Packing Tape and Reel July 2015 DocID027971 Rev 1 This is information on a product in full production. 1/19 www.st.com Contents Contents STH290N4F6-2AG, STH290N4F6-6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 H²PAK-2 package information......................................................... 10 4.2 H²PAK-6 package information......................................................... 13 4.3 H²PAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027971 Rev 1 STH290N4F6-2AG, STH290N4F6-6AG 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID(1) IDM(2) PTOT Tstg Tj Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Storage temperature Operating junction temperature Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse width is limited by safe operating area. Symbol Rthj-case Rthj-pcb(1) Table 3: Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-pcb Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Electrical ratings Value 40 ±20 180 180 720 300 -55 to 175 Unit V V A A W °C Value 0.5 35 Unit °C/W DocID027971 Rev 1 3/19 Electrical characteristics STH290N4F6-2AG, STH290N4F6-6AG 2 Electrical characteristics (T${casePCB} = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS IGSS.


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