Document
STH290N4F6-2AG, STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG 40 V
STH290N4F6-6AG
RDS(on) max.
1.7 mΩ
ID 180 A
PTOT 300 W
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STH290N4F6-2AG STH290N4F6-6AG
Table 1: Device summary
Marking
Package
290N4F6
H²PAK-2 H²PAK-6
Packing Tape and Reel
July 2015
DocID027971 Rev 1
This is information on a product in full production.
1/19
www.st.com
Contents
Contents
STH290N4F6-2AG, STH290N4F6-6AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 H²PAK-2 package information......................................................... 10 4.2 H²PAK-6 package information......................................................... 13
4.3 H²PAK packing information ............................................................. 16
5 Revision history ............................................................................ 18
2/19 DocID027971 Rev 1
STH290N4F6-2AG, STH290N4F6-6AG
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings Parameter
VDS VGS
ID(1)
IDM(2) PTOT Tstg
Tj
Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Storage temperature Operating junction temperature
Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse width is limited by safe operating area.
Symbol
Rthj-case Rthj-pcb(1)
Table 3: Thermal data Parameter
Thermal resistance junction-case Thermal resistance junction-pcb
Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Electrical ratings
Value 40 ±20 180 180 720 300
-55 to 175
Unit V V
A
A W
°C
Value 0.5 35
Unit °C/W
DocID027971 Rev 1
3/19
Electrical characteristics
STH290N4F6-2AG, STH290N4F6-6AG
2 Electrical characteristics
(T${casePCB} = 25 °C unless otherwise specified) Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 250 µA
IDSS
IGSS.