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STH290N4F6-2AG Dataheets PDF



Part Number STH290N4F6-2AG
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STH290N4F6-2AG DatasheetSTH290N4F6-2AG Datasheet (PDF)

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Swit.

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STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6 Packing Tape and Reel July 2015 DocID027971 Rev 1 This is information on a product in full production. 1/19 www.st.com Contents Contents STH290N4F6-2AG, STH290N4F6-6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 H²PAK-2 package information......................................................... 10 4.2 H²PAK-6 package information......................................................... 13 4.3 H²PAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027971 Rev 1 STH290N4F6-2AG, STH290N4F6-6AG 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID(1) IDM(2) PTOT Tstg Tj Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Storage temperature Operating junction temperature Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse width is limited by safe operating area. Symbol Rthj-case Rthj-pcb(1) Table 3: Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-pcb Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Electrical ratings Value 40 ±20 180 180 720 300 -55 to 175 Unit V V A A W °C Value 0.5 35 Unit °C/W DocID027971 Rev 1 3/19 Electrical characteristics STH290N4F6-2AG, STH290N4F6-6AG 2 Electrical characteristics (T${casePCB} = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source onresistance VGS = 0 V, VDS = 40 V VGS = 0 V, VDS = 40 V, Tcase = 125 °C VDS = 0 V, VGS = ±20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 45 A Min. Typ. Max. Unit 40 V 1 µA 100 ±100 nA 2 4V 1.3 1.7 mΩ Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Table 5: Dynamic Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 180 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") Min. Typ. Max. Unit - 7380 - - 1080 - pF - 590 - - 115 - 33 - nC - 32 - Symbol Parameter td(on) tr td(off) Turn-on delay time Rise time Turn-off delay time tf Fall time Table 6: Switching times Test conditions VDD = 20 V, ID = 90 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") Min. - Typ. 20 116 105 Max. - Unit ns - 48 - 4/19 DocID027971 Rev 1 STH290N4F6-2AG, STH290N4F6-6AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current - 180 A ISDM VSD(2) Source-drain current (pulsed) Forward on voltage VGS = 0 V, ISD = 90 A - 720 A - 1.3 V trr Reverse recovery time ISD = 180 A, di/dt = 100 A/µs, Qrr Reverse recovery charge VDD = 32 V (see Figure 15: "Test circuit for inductive load IRRM Reverse recovery current switching and diode recovery times") - 36 - 42 - 2.3 ns nC A Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027971 Rev 1 5/19 Electrical characteristics STH290N4F6-2AG, STH290N4F6-6AG 2.1 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics .


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