Document
STH290N4F6-2AG, STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG 40 V
STH290N4F6-6AG
RDS(on) max.
1.7 mΩ
ID 180 A
PTOT 300 W
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STH290N4F6-2AG STH290N4F6-6AG
Table 1: Device summary
Marking
Package
290N4F6
H²PAK-2 H²PAK-6
Packing Tape and Reel
July 2015
DocID027971 Rev 1
This is information on a product in full production.
1/19
www.st.com
Contents
Contents
STH290N4F6-2AG, STH290N4F6-6AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 H²PAK-2 package information......................................................... 10 4.2 H²PAK-6 package information......................................................... 13
4.3 H²PAK packing information ............................................................. 16
5 Revision history ............................................................................ 18
2/19 DocID027971 Rev 1
STH290N4F6-2AG, STH290N4F6-6AG
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings Parameter
VDS VGS
ID(1)
IDM(2) PTOT Tstg
Tj
Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Storage temperature Operating junction temperature
Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse width is limited by safe operating area.
Symbol
Rthj-case Rthj-pcb(1)
Table 3: Thermal data Parameter
Thermal resistance junction-case Thermal resistance junction-pcb
Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Electrical ratings
Value 40 ±20 180 180 720 300
-55 to 175
Unit V V
A
A W
°C
Value 0.5 35
Unit °C/W
DocID027971 Rev 1
3/19
Electrical characteristics
STH290N4F6-2AG, STH290N4F6-6AG
2 Electrical characteristics
(T${casePCB} = 25 °C unless otherwise specified) Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 250 µA
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current
Gate-body leakage current Gate threshold voltage Static drain-source onresistance
VGS = 0 V, VDS = 40 V VGS = 0 V, VDS = 40 V, Tcase = 125 °C VDS = 0 V, VGS = ±20 V VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 45 A
Min. Typ. Max. Unit
40 V 1 µA
100 ±100 nA 2 4V 1.3 1.7 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer capacitance
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
Table 5: Dynamic Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDD = 20 V, ID = 180 A, VGS = 10 V (see Figure 14: "Gate charge test circuit")
Min. Typ. Max. Unit
- 7380 -
- 1080 -
pF
- 590 -
- 115 - 33 - nC - 32 -
Symbol
Parameter
td(on) tr
td(off)
Turn-on delay time Rise time Turn-off delay time
tf Fall time
Table 6: Switching times
Test conditions
VDD = 20 V, ID = 90 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform")
Min. -
Typ. 20 116 105
Max. -
Unit ns
- 48 -
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STH290N4F6-2AG, STH290N4F6-6AG
Electrical characteristics
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
- 180 A
ISDM VSD(2)
Source-drain current (pulsed)
Forward on voltage
VGS = 0 V, ISD = 90 A
- 720 A - 1.3 V
trr Reverse recovery time
ISD = 180 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge VDD = 32 V (see Figure 15: "Test circuit for inductive load
IRRM
Reverse recovery current switching and diode recovery times")
- 36 - 42
- 2.3
ns nC
A
Notes: (1) Limited by package, current allowed by silicon is 295 A. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
STH290N4F6-2AG, STH290N4F6-6AG
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
.