STD28P3LLH6AG

STD28P3LLH6AG Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD28P3LLH6AG Table 1: Device summary Marking Package 28P3LLH6 DPAK Packing Tape and reel September 2015 DocID028397 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents Contents STD28P3LLH6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package inf...