Document
STF24N60M2, STFI24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages
Datasheet − production data
Features
3 2 1
TO-220FP
123
I2PAKFP (TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Order codes STF24N60M2 STFI24N60M2
VDS @ TJmax 650 V
RDS(on) max ID 0.19 Ω 18 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Applications
• Switching applications • LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STF24N60M2 STFI24N60M2
Table 1. Device summary
Marking
Package
24N60M2
TO-220FP I2PAKFP (TO-281)
Packaging Tube
May 2013
This is information on a product in full production.
DocID024026 Rev 4
1/14
www.st.com
14
Contents
Contents
STF24N60M2, STFI24N60M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID024026 Rev 4
STF24N60M2, STFI24N60M2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS ID ID IDM (2) PTOT dv/dt (3) dv/dt(4)
Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)
Tstg Storage temperature Tj Max. operating junction temperature
1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. 4. VDS ≤ 480 V
Value ± 25 18 (1) 12 (1) 72 (1) 30 15 50
2500
- 55 to 150
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max
Value 4.17 62.5
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50)
Value 3.5 180
Unit V A A A W
V/ns V/ns
V °C
Unit °C/W °C/W
Unit A mJ
DocID024026 Rev 4
3/14
Electrical characteristics
2 Electrical characteristics
STF24N60M2, STFI24N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0, ID = 1 mA
IDSS
Zero gate voltage drain current
IGSS
Gate-body leakage current
VGS = 0, VDS = 600 V VGS = 0, VDS = 600 V, TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th) RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source onresistance
VGS = 10 V, ID = 9 A
Min. Typ. Max. Unit 600 V
1 µA 100 µA
±10 µA 2 3 4V
0.168 0.19 Ω
Symbol
Parameter
Table 6. Dynamic Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
- 1060 - pF - 55 - pF - 2.2 - pF
Coss
(1) eq.
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0
- 258 - pF
RG
Intrinsic gate resistance
f = 1 MHz, ID=0
- 7 -Ω
Qg Total gate charge
VDD = 480 V, ID = 18 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 14)
- 29 - nC - 6 - nC - 12 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
4/14 DocID024026 Rev 4
STF24N60M2, STFI24N60M2
Electrical characteristics
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Table 7. Switching times Test conditions
VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19)
Min. Typ. Max. Unit - 14 - ns - 9 - ns - 60 - ns - 15 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD(1) Source-drain current ISDM (1),(2) Source-drain current (pulsed)
VSD (3) Forward on voltage
ISD = 18 A, VGS = 0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
IS.