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STFI24N60M2 Dataheets PDF



Part Number STFI24N60M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STFI24N60M2 DatasheetSTFI24N60M2 Datasheet (PDF)

STF24N60M2, STFI24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data Features 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected A.

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STF24N60M2, STFI24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data Features 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF24N60M2 STFI24N60M2 Table 1. Device summary Marking Package 24N60M2 TO-220FP I2PAKFP (TO-281) Packaging Tube May 2013 This is information on a product in full production. DocID024026 Rev 4 1/14 www.st.com 14 Contents Contents STF24N60M2, STFI24N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 DocID024026 Rev 4 STF24N60M2, STFI24N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VGS ID ID IDM (2) PTOT dv/dt (3) dv/dt(4) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. 4. VDS ≤ 480 V Value ± 25 18 (1) 12 (1) 72 (1) 30 15 50 2500 - 55 to 150 Symbol Table 3. Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Value 4.17 62.5 Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) Value 3.5 180 Unit V A A A W V/ns V/ns V °C Unit °C/W °C/W Unit A mJ DocID024026 Rev 4 3/14 Electrical characteristics 2 Electrical characteristics STF24N60M2, STFI24N60M2 (TC = 25 °C unless otherwise specified) Symbol Parameter Table 5. On /off states Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS = 0, VDS = 600 V VGS = 0, VDS = 600 V, TC=125 °C VDS = 0, VGS = ± 25 V VGS(th) RDS(on) Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source onresistance VGS = 10 V, ID = 9 A Min. Typ. Max. Unit 600 V 1 µA 100 µA ±10 µA 2 3 4V 0.168 0.19 Ω Symbol Parameter Table 6. Dynamic Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1060 - pF - 55 - pF - 2.2 - pF Coss (1) eq. Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 258 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 - 7 -Ω Qg Total gate charge VDD = 480 V, ID = 18 A, Qgs Gate-source charge VGS = 10 V Qgd Gate-drain charge (see Figure 14) - 29 - nC - 6 - nC - 12 - nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 DocID024026 Rev 4 STF24N60M2, STFI24N60M2 Electrical characteristics Symbol Parameter td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time Table 7. Switching times Test conditions VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19) Min. Typ. Max. Unit - 14 - ns - 9 - ns - 60 - ns - 15 - ns Table 8. Source drain diode Symbol Parameter Test conditions ISD(1) Source-drain current ISDM (1),(2) Source-drain current (pulsed) VSD (3) Forward on voltage ISD = 18 A, VGS = 0 trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current IS.


STF24N60M2 STFI24N60M2 STGIPS40W60L1


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