STFI24NM60N

STFI24NM60N N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a I²PAKFP package Datasheet − production data Features 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order codes VDS @Tjmax RDS(on) max. ID STFI24NM60N 650 V 0.19 Ω 17 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications '* 6 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order code STFI24NM60N Table 1. Device summary Marking Packages 24NM60N I2PAKFP (TO-281) Packaging Tube July 2014 This is information on a product in full production. DocID022440 Rev 3 1/12 www.st.com Contents Contents STFI24NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....