STAP85025S
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Datasheet - production...
STAP85025S
RF power
transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
STAP1 Figure 1. Pin connection
Drain
Description
The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio.
The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
Gate
Source
Features
Excellent thermal stability
Common source configuration
POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC European directive Table 1. Device summary
Order code
Marking
Package
STAP85025S
STAP85025S
STAP1
Packing Tube
December 2015
This is information on a product in full production.
DocID15795 Rev 5
1/13
www.st.com
Contents
Contents
STAP85025S
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . ...