HCF4069U

HCF4069U Hex inverter Datasheet - production data ESD performance – HBM: 1 kV – MM: 200 V – CDM: 1 kV SO14 Features Medium-speed operation tPD = 30 ns (typ.) at 10 V Standardized symmetrical output characteristics Quiescent current specified up to 20 V 5 V, 10 V, and 15 V parametric ratings Input leakage current II = 100 nA (max.) at VDD = 18 V and TA = 25 ° C 100 % tested for quiescent current Applications Automotive Industrial Computer Consumer Description The HCF4069U is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in the SO14 package. The HCF4069U consists of six COS/MOS inverter circuits. This device is intended for all general purpose inverter applications where the medium power TTL-drive and logic level conversion capabilities of circuits such as HCF4049 hex inverter/buffers are not required. Table 1. Device summary table Order code Temperature range Package Packing Marking HCF4069UM013TR -55 ° C to +125 ° C HCF4069YUM013TR (1) -40 ° C to +125 ° C SO14 SO14 (automotive grade)(1) Tape and reel HCF4069U HCF4069Y 1. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 & Q002 or equivalent. January 2014 This is information on a product in full production. DocID2060 Rev 6 1/11 www.st.com Contents Contents HCF4069U 1 Pin information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....