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IRUH330125BP Dataheets PDF



Part Number IRUH330125BP
Manufacturers International Rectifier
Logo International Rectifier
Description Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator
Datasheet IRUH330125BP DatasheetIRUH330125BP Datasheet (PDF)

PD-97592B (5962F1023504K) IRUH330125BK Radiation Hardended Ultra Low Dropout IRUH330125BP Fixed Positive Linear Regulator +3.3VIN to +2.5VOUT @3.0A Product Summary Part Number Dropout IO VIN VOUT IRUH330125BK IRUH330125BP 0.4V 3.0A 3.3V 2.5V MO-078AA Description The IRUH330125 is a space qualified, ultra low dropout linear regulator designed specifically for applications requiring high reliability, low noise and radiation hardness. Absolute Maximum Ratings Features n Silicon O.

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PD-97592B (5962F1023504K) IRUH330125BK Radiation Hardended Ultra Low Dropout IRUH330125BP Fixed Positive Linear Regulator +3.3VIN to +2.5VOUT @3.0A Product Summary Part Number Dropout IO VIN VOUT IRUH330125BK IRUH330125BP 0.4V 3.0A 3.3V 2.5V MO-078AA Description The IRUH330125 is a space qualified, ultra low dropout linear regulator designed specifically for applications requiring high reliability, low noise and radiation hardness. Absolute Maximum Ratings Features n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg n Space Level Screened n Fast Transient Response n Timed Latch-Off Over-Current Protection n Internal Thermal Protection n On/Off Control via Shutdown Pin, Power Sequencing Easily Implemented n Isolated Hermetic MO-078 Package Ensures Higher Reliability n This part is also available in 8-Lead Flat Pack Package as IRUH330125AK / IRUH330125AP Parameter Symbol Min. Max. Units Power Dissipation @ TC = 125°C Maximum Output Current @ Maximum Power Dissipation with no Derating Non-Operating Input Voltage Operating Input Voltage Ground Shutdown Pin Voltage Output Pin Voltage Operating Case Temperature Range Storage Temperature Range Maximmum Junction Temperature Lead Temperature (Soldering 10sec) Pass Transistor Thermal Resistance, Junction to Case PD IO VIN VIN GND VSHDN VOUT TO TS TJ TL RTHJC - 25 W - See Fig 4 A -0.3 +8.0 2.9 6.4 -0.3 0.3 V -0.3 VIN + 0.3 -0.3 VIN + 0.3 -55 +140 -65 - +150 +150 °C - +300 - 1.0 °C/W www.irf.com 1 05/18/12 IRUH330125BK IRUH330125BP cElectrical Characteristics Pre-Radiation @TC = 25°C, VIN = 3.3V (Unless Otherwise Specified) Parameter Test Conditions cOutput Voltage 2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A 2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A, -55°C to +125°C 2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A, Post -Rad cDropout Voltage IO = 3.0A, VOUT = 2.5V, -55°C to +125°C, Post -Rad Current Limit Over-Current Latching, -55°C to +125°C, Post -Rad Over-Current Time-to-Latch IO > ILATCH dMaximum Shutdown Temp. dRipple Rejection dVSENSE Pin Current F= 120Hz, IO = 50mA, -55°C to +125°C F= 120Hz, IO = 50mA, Post -Rad -55°C to +125°C Minimum SHDN Pin "On" ISOURCE = 200µA, -55°C to +125°C Threshold Voltage Post -Rad Maximum SHDN Pin "Off" ISOURCE = 200µA, -55°C to +125°C Threshold Voltage Post -Rad Output Voltage at Shutdown RLOAD = 36 Ohms, VSHDN = 3.3V -55°C to +125°C, Post-Rad dSHDN Pin Leakage Current VSHDN = 3.3V, -55°C to +125°C,Post-Rad VSHDN = 0.4V dSHDN Pin Pull-Up Current VSHDN = 0.4V, -55°C to +125°C dPower On Reset Threshold VSHDN = 0.4V, Post-Rad Sweep VIN and Measure Output dQuiescent Current No Load Full Load Symbol VOUT VDROP ILATCH tLATCH TLATCH PSRR ISENSE VSHDN VSHDN VOUT ISHDN ISHDN VT-POR IQ Min. Typ. 2.463 2.5 2.425 2.5 2.412 2.5 -- 3.5 - - 10 125 140 65 40 - - 1.6 -- 1.2 - -0.1 -10 -98 -140 -98 - - 1.7 - Max. 2.538 2.575 2.550 0.4 - 0.8 - 0.1 10 -56 -30 -56 15 90 Units V V A ms °C dB mA V V V µA µA V mA Notes:  Connected as shown in Fig.1 and measured at the junction of VOUT and VSENSE Pins. ‚ Under normal closed-loop operation. Guaranteed by design. Not tested in production. 2 www.irf.com IRUH330125BK IRUH330125BP Radiation Performance Characteristics Test Conditions Min Typ Unit MIL-STD-883, Method 1019 (Condition A) Total Ionizing Dose (Gamma) Operating Bias applied during exposure c300 500 Krads (Si) Minimum Rated Load, Vin = 6.4V MIL-STD-883, Method 1019 (Condition D) Total Ionizing Dose (Gamma) (ELDRS) Operating Bias applied during d100 See Krads (Si) exposure Minimum Rated Load, Vin = 6.4V Single Event effects SEU, SEL, SEGR, SEB Heavy Ions (LET) Operating Bias applied during exposure 84 MeV*cm2/mg under varying operating conditions Neutron Fluence MIL-STD-883, Method 1017 1.0e11 Neutrons/cm2 Notes:  Tested to 500Krad (Si). ‚ See Fig. 5. Space Level Screening Requirements TEST/INSPECTION SCREENING LEVEL SPACE Nondestructive Bond Pull Internal Visual Seal Temperature Cycle Constant Acceleration Mechanical Shock PIND Pre Burn-In-Electrical Burn-In Final Electrical Radiographic External Visual 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% MIL-STD-883 METHOD 2023 2017 1014 1010 2001 2002 2020 1015 2012 2009 www.irf.com 3 IRUH330125BK IRUH330125BP Application Information Input Voltage 0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum VIN VOUT IRUH3301xxxx VSENSE SHDN GND Output Voltage 0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum Fig. 1. Typical Regulator Circuit; Note the SHDN Pin is hardwired in the “ON” position. The VSENSE Pin is connected as noted in the “General Layout Rules” section. Over-Current & Over-Temperature Protection The IRUH3301 series provides over-current protection by means of a timed latch function. Drive.


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