Document
PD-97592B
(5962F1023504K)
IRUH330125BK
Radiation Hardended Ultra Low Dropout
IRUH330125BP
Fixed Positive Linear Regulator
+3.3VIN to +2.5VOUT @3.0A
Product Summary
Part Number
Dropout
IO
VIN VOUT
IRUH330125BK IRUH330125BP
0.4V
3.0A
3.3V
2.5V
MO-078AA
Description
The IRUH330125 is a space qualified, ultra low dropout linear regulator designed specifically for applications requiring high reliability, low noise and radiation hardness.
Absolute Maximum Ratings
Features
n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard
n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si)
n ELDRS up to 100Krad(Si) (Condition D)
n SEU Immune up to LET = 80 MeV*cm2/mg
n Space Level Screened n Fast Transient Response n Timed Latch-Off Over-Current Protection n Internal Thermal Protection n On/Off Control via Shutdown Pin, Power
Sequencing Easily Implemented n Isolated Hermetic MO-078 Package
Ensures Higher Reliability n This part is also available in 8-Lead Flat Pack
Package as IRUH330125AK / IRUH330125AP
Parameter
Symbol
Min.
Max.
Units
Power Dissipation @ TC = 125°C Maximum Output Current @ Maximum Power Dissipation with no Derating Non-Operating Input Voltage Operating Input Voltage
Ground Shutdown Pin Voltage Output Pin Voltage Operating Case Temperature Range Storage Temperature Range Maximmum Junction Temperature Lead Temperature (Soldering 10sec) Pass Transistor Thermal Resistance, Junction to Case
PD
IO
VIN VIN GND VSHDN VOUT TO TS TJ TL RTHJC
- 25 W
-
See Fig 4
A
-0.3 +8.0
2.9 6.4
-0.3 0.3 V -0.3 VIN + 0.3 -0.3 VIN + 0.3 -55 +140
-65 -
+150 +150
°C
- +300
- 1.0 °C/W
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IRUH330125BK IRUH330125BP
cElectrical Characteristics
Pre-Radiation @TC = 25°C, VIN = 3.3V (Unless Otherwise Specified)
Parameter
Test Conditions
cOutput Voltage
2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A 2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A,
-55°C to +125°C
2.97V ≤ VIN ≤ 3.8V, 50mA ≤ IOUT ≤ 3.0A,
Post -Rad
cDropout Voltage
IO = 3.0A, VOUT = 2.5V, -55°C to +125°C, Post -Rad
Current Limit
Over-Current Latching, -55°C to +125°C, Post -Rad
Over-Current Time-to-Latch IO > ILATCH
dMaximum Shutdown Temp.
dRipple Rejection dVSENSE Pin Current
F= 120Hz, IO = 50mA, -55°C to +125°C F= 120Hz, IO = 50mA, Post -Rad -55°C to +125°C
Minimum SHDN Pin "On"
ISOURCE = 200µA, -55°C to +125°C
Threshold Voltage
Post -Rad
Maximum SHDN Pin "Off"
ISOURCE = 200µA, -55°C to +125°C
Threshold Voltage
Post -Rad
Output Voltage at Shutdown RLOAD = 36 Ohms, VSHDN = 3.3V -55°C to +125°C, Post-Rad
dSHDN Pin Leakage Current VSHDN = 3.3V, -55°C to +125°C,Post-Rad
VSHDN = 0.4V
dSHDN Pin Pull-Up Current
VSHDN = 0.4V, -55°C to +125°C
dPower On Reset Threshold
VSHDN = 0.4V, Post-Rad Sweep VIN and Measure Output
dQuiescent Current
No Load Full Load
Symbol
VOUT
VDROP ILATCH tLATCH TLATCH PSRR ISENSE VSHDN VSHDN VOUT ISHDN ISHDN VT-POR
IQ
Min. Typ. 2.463 2.5
2.425 2.5
2.412 2.5
--
3.5 -
- 10 125 140 65 40 -
- 1.6
--
1.2 -
-0.1
-10 -98 -140 -98
-
-
1.7 -
Max. 2.538
2.575
2.550
0.4
-
0.8
-
0.1
10 -56 -30 -56
15 90
Units
V
V A ms °C dB mA V V V µA µA V mA
Notes: Connected as shown in Fig.1 and measured at the junction of VOUT and VSENSE Pins. Under normal closed-loop operation. Guaranteed by design. Not tested in production.
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IRUH330125BK IRUH330125BP
Radiation Performance Characteristics
Test
Conditions
Min Typ
Unit
MIL-STD-883, Method 1019 (Condition A) Total Ionizing Dose (Gamma) Operating Bias applied during exposure
c300 500
Krads (Si)
Minimum Rated Load, Vin = 6.4V
MIL-STD-883, Method 1019 (Condition D) Total Ionizing Dose (Gamma) (ELDRS) Operating Bias applied during
d100 See
Krads (Si)
exposure Minimum Rated Load, Vin = 6.4V
Single Event effects SEU, SEL, SEGR, SEB
Heavy Ions (LET) Operating Bias applied during exposure
84
MeV*cm2/mg
under varying operating conditions
Neutron Fluence
MIL-STD-883, Method 1017
1.0e11 Neutrons/cm2
Notes:
Tested to 500Krad (Si). See Fig. 5.
Space Level Screening Requirements
TEST/INSPECTION
SCREENING LEVEL
SPACE
Nondestructive Bond Pull Internal Visual Seal
Temperature Cycle Constant Acceleration
Mechanical Shock PIND
Pre Burn-In-Electrical Burn-In
Final Electrical Radiographic External Visual
100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100%
MIL-STD-883
METHOD
2023 2017 1014 1010 2001 2002 2020
1015
2012 2009
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IRUH330125BK IRUH330125BP
Application Information
Input Voltage
0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum
VIN VOUT
IRUH3301xxxx VSENSE
SHDN
GND
Output Voltage
0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum
Fig. 1. Typical Regulator Circuit; Note the SHDN Pin is hardwired in the “ON” position. The VSENSE Pin is connected as noted in the “General Layout Rules” section.
Over-Current & Over-Temperature Protection
The IRUH3301 series provides over-current protection by means of a timed latch function. Drive.