DUAL HIGH SIDE DRIVER IC
Data Sheet No. PD60294
Features
• Gate drive supply range from 10 V to 20 V • Under voltage lockout for VCC & VBS1,2 • ...
Description
Data Sheet No. PD60294
Features
Gate drive supply range from 10 V to 20 V Under voltage lockout for VCC & VBS1,2 5 V input logic compatible Tolerant to negative transient voltage Matched propagation delays for all channels RoHS compliant
Descriptions
The IRS21853 is a high voltage, high speed power MOSFET and IGBT dual high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic and can be operated up to 600 V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600 V.
Typical Connection Diagram
IRS21853SPBF
DUAL HIGH SIDE DRIVER IC
Product Summary
VOFFSET VOUT ton/toff (typ) Io+/-
Delay Matching
600 V max 10 V to 20 V 170 ns/170 ns
2 A/2 A
40 ns
Package
16-Lead SOIC (narrow body)
1 2 3 VCC 4 COM 5 HIN1 6 HIN2 7 8
VB1 16
HO1 15
VS1 14
IRS21853 SON16
13 12
VS2 11
HO2 10
VB2 9
+VDC1 +VDC2
Typical Connection Diagram for ER Circuit in PDP
IRS21853SPBF
1 VB1 16
2 HO1 15
3 VCC
VS1 14
4 COM 5 HIN1
IRS21853 SON16
13 12
6 HIN2
VS2 11
7 HO2 10
8 VB2 9
C ERC
L ER C
Cp
2
IRS21853SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained li...
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