Document
N N-CHANNEL MOSFET
R
JCS75N75F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
DC/DC D
75 A 75 V
9.8 mΩ
74 nC
APPLICATIONS High efficiency switching
DC/DC converters and switch mode power supply DC Motor control and Class D Amplifier
Crss( 55pF) dv/dt RoHS
FEATURES Low gate charge Low Crss(typical 55pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
Package
JCS75N75CF-O-C-N-B JCS75N75FF-O-F-N-B JCS75N75SF-O-S-N-A JCS75N75SF-O-S-N-B
JCS75N75CF JCS75N75FF JCS75N75SF JCS75N75SF
TO-220C TO-220MF TO-263 TO-263
Halogen Free Packaging
NO NO NO NO
Tube Tube Reel Tube
Device Weight 2.06 g(typ) 2.22 g(typ) 1.93 g(typ) 1.93 g(typ)
:201510D
1/11
R JCS75N75F
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
- Drain-Source Voltage
V DSSB B
Drain Current-continuous
I DB T=25℃
B
T=100℃
( 1) Drain Current – pulse(note 1)
I DMB B
Gate-Source Voltage
V GSSB B
( 2) Single Pulsed Avalanche Energy(note 2)
E ASB B
( 1) Avalanche Current(note 1)
I ARB B
( 1) Repetitive Avalanche Energy (note 1)
E ARB B
( 3) Peak Diode Recovery Dv/dt (note dv/dt 3)
Power Dissipation
P DB T =25℃CB B B -Derate
above 25℃
Operating and StorageTemperature Range
T ,TJ STGB B
BB
Maximum LeadTemperature for Soldering Purposes
T LB B
Value JCS75N75CF/SF JCS75N75FF
75 75 56
300
75 75* 43*
±20
1125
75
25 4.35
12 250 43.5 1.67 0.29
-55~+175
300
Unit V A A A V
mJ
A
mJ
V/ns
W W/℃
℃
℃
* *Drain current limited by maximum junction temperature
:201510D
2/11
R
ELECTRICAL CHARACTERISTICS
JCS75N75F
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BV DSSB B
I DB
=250μA,
B
VBGSB=0V
75 - - V
Breakdown Voltage Temperature Coefficient
ΔBVBDSS
/Δ
B
T JB B
I DB
=1m
B
A,
referenced
to
25℃
-
0.08 -
V/℃
Zero Gate Voltage Drain Current
IDSSB B
Gate-body leakage current, forward IBGSSFB
VBDSB=75V,VBGSB=0V, TBCB=25℃
VBDSB=60V,
T CB
=125℃
B
-
VBDSB=0V, V GSB B =20V
-
- 1 μA - 10 μA
- 100 nA
Gate-body leakage current, reverse IBGSSRB
VBDSB=0V, VGSB B =-20V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VBGS(th)B
V = V ,DSB B
GSB B
I
DB
=250μA
B
2.0 - 4.0 V
Static Drain-Source On-Resistance RBDS(ON)B
VGSB B =10V ,
I DB
=40A
B
- 8.3 9.8 mΩ
Gate Resistance RG f=1.0MHZ , open drain
3.5 Ω
Forward Transconductance
gfsB B
Dynamic Characteristics
Input capacitance
C issB B
Output capacitance
C ossB B
Reverse transfer capacitance
C rssB B
VDSB B = 38V , IBDB=40A(note 4) - 68 -
S
VBDSB=25V, VGSB B =0V, f=1.0MHBZB
- 4230 - pF - 821 - pF - 55 - pF
:201510D
3/11
R JCS75N75F
ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time
t dB
(on)
B
VBDDB=38V,IBDB=40A,RBGB=25Ω
- 16
Turn-On rise time Turn-Off delay time
t rB B
t dB
(off)
B
VGSB B =10V (note 4,5)
- 54 - 55
Turn-Off Fall time
t fB B
- 35
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Q gB B Q gsB B Q gdB B
VDSB B =60V ,
- 74
I DB
=40A
B
- 17 -
VGSB B =10V (note 4,5) - 22 -
ns ns ns ns nC nC nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
ISB B - - 75 A
Maximum Pulsed Drain-Source Diode Forward Current
ISMB B - - 300 A
Drain-Source Diode Forward Voltage
V SDB B
VBGSB=0V,
I SB
=75A
B
- - 1.4 V
Reverse recovery time
t rrB B
Reverse recovery charge
Q rrB BBB
THERMAL CHARACTERISTIC
VBGSB=0V, IBSB=75A dIBFB/dt=100A/μs (note 4)
- 88 - ns - 233 - nC
Parameter
Max Symbol
JCS75N75CF/SF JCS75N75FF
Unit
Thermal Resistance, Junction to Case
Rth(j-c)
0.60
3.41 ℃/W
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5 ℃/W
:
1:
2:L=0.4mH, IBASB=75A, R =2GB B 5 Ω,TBJB=25℃
3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDSSB,
T JB
=25℃
B
4::≤300μs,≤2%
5:
Notes: 1:Pulse width limited by maximum junction temperature 2:L=0.4mH, IBASB=75A, RBGB=25 Ω,Starting TBJB=25℃ 3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDS ,SB Starting TBJB=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
:201510D
4/11
I D [A]
RDSON [Ω]
R
ELECTRICAL CHARACTERISTICS (curves)
JCS75N75F
On-Region Characteristics
Transfer Characteristics
240
V GS
Top 12V 10V 8V 7V 6V
Bottom 5V
180
120
VGS=8V VGS=7V
VGS=6V
ID [A]
240 180 120
VGS=5V
60
Notes: 1. 250μs pulse test 2. TC=25℃
0 0 5 10 15
VDS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
0.040
0.035
0.030
0.025 0.020
40A
0.015
0.010
0.005
Notes: 250μs pulse test
0.000 2 4 6 8 10 12 14
VGS [V]
Capacitance Characteristics
8.0x103 6.0x103
Ciss =Cgs+Cgd (Cds=shorted) Coss =Cds+Cgd Crss =Cgd
4.0x103
Ciss
2.0x103
0.0 10-1
Coss
Crss
100 101
VDS Drain-SourceVoltage[V]
I DR [A]
VGS Gate Source Voltage[V]
60 Notes: 1.250μs pulse test 2.VDS=40V
0 0 2 .