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JCS75N75SF Dataheets PDF



Part Number JCS75N75SF
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS75N75SF DatasheetJCS75N75SF Datasheet (PDF)

N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPLICATIONS  High efficiency switching DC/DC converters and switch mode power supply  DC Motor control and Class D Amplifier  Crss( 55pF)    dv/dt RoHS FEATURES Low gate charge Low Crss(typical 55pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package JCS75N7.

  JCS75N75SF   JCS75N75SF



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N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPLICATIONS  High efficiency switching DC/DC converters and switch mode power supply  DC Motor control and Class D Amplifier  Crss( 55pF)    dv/dt RoHS FEATURES Low gate charge Low Crss(typical 55pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package JCS75N75CF-O-C-N-B JCS75N75FF-O-F-N-B JCS75N75SF-O-S-N-A JCS75N75SF-O-S-N-B JCS75N75CF JCS75N75FF JCS75N75SF JCS75N75SF TO-220C TO-220MF TO-263 TO-263 Halogen Free Packaging NO NO NO NO Tube Tube Reel Tube Device Weight 2.06 g(typ) 2.22 g(typ) 1.93 g(typ) 1.93 g(typ) :201510D 1/11 R JCS75N75F ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol - Drain-Source Voltage V DSSB B Drain Current-continuous I DB T=25℃ B T=100℃ ( 1) Drain Current – pulse(note 1) I DMB B Gate-Source Voltage V GSSB B ( 2) Single Pulsed Avalanche Energy(note 2) E ASB B ( 1) Avalanche Current(note 1) I ARB B ( 1) Repetitive Avalanche Energy (note 1) E ARB B ( 3) Peak Diode Recovery Dv/dt (note dv/dt 3) Power Dissipation P DB T =25℃CB B B -Derate above 25℃ Operating and StorageTemperature Range T ,TJ STGB B BB Maximum LeadTemperature for Soldering Purposes T LB B Value JCS75N75CF/SF JCS75N75FF 75 75 56 300 75 75* 43* ±20 1125 75 25 4.35 12 250 43.5 1.67 0.29 -55~+175 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ * *Drain current limited by maximum junction temperature :201510D 2/11 R ELECTRICAL CHARACTERISTICS JCS75N75F Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BV DSSB B I DB =250μA, B VBGSB=0V 75 - - V Breakdown Voltage Temperature Coefficient ΔBVBDSS /Δ B T JB B I DB =1m B A, referenced to 25℃ - 0.08 - V/℃ Zero Gate Voltage Drain Current IDSSB B Gate-body leakage current, forward IBGSSFB VBDSB=75V,VBGSB=0V, TBCB=25℃ VBDSB=60V, T CB =125℃ B - VBDSB=0V, V GSB B =20V - - 1 μA - 10 μA - 100 nA Gate-body leakage current, reverse IBGSSRB VBDSB=0V, VGSB B =-20V - - -100 nA On-Characteristics Gate Threshold Voltage VBGS(th)B V = V ,DSB B GSB B I DB =250μA B 2.0 - 4.0 V Static Drain-Source On-Resistance RBDS(ON)B VGSB B =10V , I DB =40A B - 8.3 9.8 mΩ Gate Resistance RG f=1.0MHZ , open drain 3.5 Ω Forward Transconductance gfsB B Dynamic Characteristics Input capacitance C issB B Output capacitance C ossB B Reverse transfer capacitance C rssB B VDSB B = 38V , IBDB=40A(note 4) - 68 - S VBDSB=25V, VGSB B =0V, f=1.0MHBZB - 4230 - pF - 821 - pF - 55 - pF :201510D 3/11 R JCS75N75F ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time t dB (on) B VBDDB=38V,IBDB=40A,RBGB=25Ω - 16 Turn-On rise time Turn-Off delay time t rB B t dB (off) B VGSB B =10V (note 4,5) - 54 - 55 Turn-Off Fall time t fB B - 35 Total Gate Charge - Gate-Source charge - Gate-Drain charge Q gB B Q gsB B Q gdB B VDSB B =60V , - 74 I DB =40A B - 17 - VGSB B =10V (note 4,5) - 22 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current ISB B - - 75 A Maximum Pulsed Drain-Source Diode Forward Current ISMB B - - 300 A Drain-Source Diode Forward Voltage V SDB B VBGSB=0V, I SB =75A B - - 1.4 V Reverse recovery time t rrB B Reverse recovery charge Q rrB BBB THERMAL CHARACTERISTIC VBGSB=0V, IBSB=75A dIBFB/dt=100A/μs (note 4) - 88 - ns - 233 - nC Parameter Max Symbol JCS75N75CF/SF JCS75N75FF Unit Thermal Resistance, Junction to Case Rth(j-c) 0.60 3.41 ℃/W Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 62.5 ℃/W : 1: 2:L=0.4mH, IBASB=75A, R =2GB B 5 Ω,TBJB=25℃ 3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDSSB, T JB =25℃ B 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=0.4mH, IBASB=75A, RBGB=25 Ω,Starting TBJB=25℃ 3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDS ,SB Starting TBJB=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature :201510D 4/11 I D [A] RDSON [Ω] R ELECTRICAL CHARACTERISTICS (curves) JCS75N75F On-Region Characteristics Transfer Characteristics 240 V GS Top 12V 10V 8V 7V 6V Bottom 5V 180 120 VGS=8V VGS=7V VGS=6V ID [A] 240 180 120 VGS=5V 60 Notes: 1. 250μs pulse test 2. TC=25℃ 0 0 5 10 15 VDS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.040 0.035 0.030 0.025 0.020 40A 0.015 0.010 0.005 Notes: 250μs pulse test 0.000 2 4 6 8 10 12 14 VGS [V] Capacitance Characteristics 8.0x103 6.0x103 Ciss =Cgs+Cgd (Cds=shorted) Coss =Cds+Cgd Crss =Cgd 4.0x103 Ciss 2.0x103 0.0 10-1 Coss Crss 100 101 VDS Drain-SourceVoltage[V] I DR [A] VGS Gate Source Voltage[V] 60 Notes: 1.250μs pulse test 2.VDS=40V 0 0 2 .


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