Document
N R N-CHANNEL MOSFET
JCS50N06H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
50 A 60 V
23 mΩ
34 nC
UPS
APPLICATIONS High frequency switch
mode power supplies UPS
Crss dv/dt RoHS
FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A
JCS50N06CH JCS50N06FH JCS50N06VH JCS50N06RH JCS50N06RH
Package
TO-220C TO-220MF IPAK DPAK DPAK
Halogen
Free NO NO NO NO NO
Packaging
Tube Tube Tube Tube Reel
Device Weight 2.06 g(typ) 2.22 g(typ) 0.35 g(typ) 0.35 g(typ) 0.35 g(typ)
:201510D
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ABSOLUTE RATINGS (Tc=25℃)
JCS50N06H
Parameter
Value
Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH Unit
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current – pulse(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy (note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Energy(note EAR 1)
60 50 31.7
200* ±20
500
50
8.75 10.3
50* 31.7*
V A A A
V
mJ
A
5.6 mJ
( 3)
dv/dt
Peak Diode Recovery dv/d(t note 3)
7.0 V/ns
Power Dissipation
PD TC=25℃ -Derate
above 25℃
87.5 0.70
Operating and Storage Temperature TJ,TSTG Range
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
103.8 0.83 -55~+150 300
56 W 0.45 W/℃
℃ ℃
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ELECTRICAL CHARACTERISTICS
JCS50N06H
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient
Symbol
Tests conditions
BVDSS
ID=250μA, VGS=0V
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
Min Typ Max Units 60 - - V - 0.6 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V, TC=25℃ VDS=48V, TC=125℃
-
- 1 μA - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
Static Drain-Source
RDS(ON)
On-Resistance
Forward Transconductance
gfs
Dynamic Characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VGS =10V , ID=25A
- 19 23 mΩ
VDS = 30V, ID=25A(note 4) - 30 - S
VDS=25V, VGS =0V, f=1.0MHZ
- 900 1125 pF - 430 540 pF - 80 100 pF
:201510D
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time
td(on)
VDD=30V,ID=50A,RG=50Ω
Turn-On rise time Turn-Off delay time
tr td(off)
VGS =10V (note 4,5)
Turn-Off Fall time
tf
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Qg Qgs Qgd
VDS =48V , ID=50A VGS =10V
(note 4,5)
JCS50N06H
- 40 90 ns - 100 210 ns - 90 190 ns - 80 170 ns - 34 45 nC - 7 - nC - 17 - nC
- Drain-Source Diode Characteristics and Maximum Ratin.