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JCS50N06VH Dataheets PDF



Part Number JCS50N06VH
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS50N06VH DatasheetJCS50N06VH Datasheet (PDF)

N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATIONS  High frequency switch mode power supplies  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A JCS50N06CH JCS.

  JCS50N06VH   JCS50N06VH



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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATIONS  High frequency switch mode power supplies  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A JCS50N06CH JCS50N06FH JCS50N06VH JCS50N06RH JCS50N06RH Package TO-220C TO-220MF IPAK DPAK DPAK Halogen Free NO NO NO NO NO Packaging Tube Tube Tube Tube Reel Device Weight 2.06 g(typ) 2.22 g(typ) 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) :201510D 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS50N06H Parameter Value Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH Unit - Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse(note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy (note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) Repetitive Avalanche Energy(note EAR 1) 60 50 31.7 200* ±20 500 50 8.75 10.3 50* 31.7* V A A A V mJ A 5.6 mJ ( 3) dv/dt Peak Diode Recovery dv/d(t note 3) 7.0 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 87.5 0.70 Operating and Storage Temperature TJ,TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 103.8 0.83 -55~+150 300 56 W 0.45 W/℃ ℃ ℃ :201510D 2/11 R ELECTRICAL CHARACTERISTICS JCS50N06H Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Symbol Tests conditions BVDSS ID=250μA, VGS=0V ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ Min Typ Max Units 60 - - V - 0.6 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V, TC=25℃ VDS=48V, TC=125℃ - - 1 μA - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage IGSSR VDS=0V, VGS =-30V - - -100 nA VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V Static Drain-Source RDS(ON) On-Resistance Forward Transconductance gfs Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VGS =10V , ID=25A - 19 23 mΩ VDS = 30V, ID=25A(note 4) - 30 - S VDS=25V, VGS =0V, f=1.0MHZ - 900 1125 pF - 430 540 pF - 80 100 pF :201510D 3/11 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time td(on) VDD=30V,ID=50A,RG=50Ω Turn-On rise time Turn-Off delay time tr td(off) VGS =10V (note 4,5) Turn-Off Fall time tf Total Gate Charge - Gate-Source charge - Gate-Drain charge Qg Qgs Qgd VDS =48V , ID=50A VGS =10V (note 4,5) JCS50N06H - 40 90 ns - 100 210 ns - 90 190 ns - 80 170 ns - 34 45 nC - 7 - nC - 17 - nC - Drain-Source Diode Characteristics and Maximum Ratin.


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