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JCS18N50FH Dataheets PDF



Part Number JCS18N50FH
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS18N50FH DatasheetJCS18N50FH Datasheet (PDF)

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS18N50FH-O-F-N-B Marking JCS18N50FH Package TO-.

  JCS18N50FH   JCS18N50FH



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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS18N50FH-O-F-N-B Marking JCS18N50FH Package TO-220MF Halogen Free NO Packaging Device Weight Tube 2.20 g(typ) :201007A 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current -pulse (note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current (note 1) IAR ( 1) Repetitive Avalanche Current (note 1) EAR ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature JCS18N50FH Value 500 18.0* 11.0* 72* ±30 900 18.0 22.7 4.5 Unit V A A A V mJ A mJ V/ns 39.0 0.31 -55~+150 300 W W/℃ ℃ ℃ :201007A 2/8 R ELECTRICAL CHARACTERISTIC JCS18N50FH Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Symbol Tests conditions Min Typ Max Units BVDSS ID=250μA, VGS=0V 500 - - V ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃ - 0.5 - V/℃ IDSS IGSSF VDS=500V, VGS=0V, TC=25℃ VDS=400V, TC=125℃ VDS=0V, VGS =30V - - - 1 μA - 10 μA - 100 nA IGSSR VDS=0V, VGS =-30V - - -100 nA VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V RDS(ON) VGS =10V , ID=9.0A - 0.22 0.27 Ω gfs VDS = 40V , ID=9.0A(note 4) - 24 - S Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 2300 2920 pF - 350 450 pF Crss - 27 43 pF :201007A 3/8 R ELECTRICAL CHARACTERISTICS JCS18N50FH Parameter Symbol Tests conditions Min Typ Max Units Switching –Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time td(on) tr td(off) VDD=250V,ID=18A,RG=25Ω (note 4,5) - 53 130 ns - 169 350 ns - 97 200 ns Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge tf Qg VDS =400V , Qgs ID=18A Qgd VGS =10V(note 4,5) - 85 195 ns - 50 60 nC - 12.5 - nC - 22 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS - - 18 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 72 A Maximum Continuous Drain-Source VSD Diode F.


JCS18N50H JCS18N50FH FHF12N60


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