Document
N N- CHANNEL MOSFET
R
JCS18N50H
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
18 A 500 V 0.27Ω 50nC
z z z UPS
APPLICATIONS
z High efficiency switch mode power supplies
z Electronic lamp ballasts based on half bridge
z UPS
z z Crss ( 25pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
Package
ORDER MESSAGE
Order codes
JCS18N50FH-O-F-N-B
Marking
JCS18N50FH
Package
TO-220MF
Halogen Free
NO
Packaging Device Weight
Tube 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage
Symbol VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current -pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current (note 1)
IAR
( 1) Repetitive Avalanche Current (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
JCS18N50FH
Value
500 18.0* 11.0* 72*
±30
900
18.0
22.7
4.5
Unit V A A A
V
mJ
A
mJ
V/ns
39.0 0.31 -55~+150 300
W W/℃
℃ ℃
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ELECTRICAL CHARACTERISTIC
JCS18N50FH
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
500 - - V
ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃
- 0.5 - V/℃
IDSS IGSSF
VDS=500V, VGS=0V, TC=25℃ VDS=400V, TC=125℃
VDS=0V, VGS =30V
-
-
- 1 μA - 10 μA - 100 nA
IGSSR VDS=0V, VGS =-30V
- - -100 nA
VGS(th) VDS = VGS , ID=250μA
3.0 - 5.0 V
RDS(ON) VGS =10V , ID=9.0A
- 0.22 0.27 Ω
gfs
VDS = 40V , ID=9.0A(note 4) - 24 -
S
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 2300 2920 pF - 350 450 pF
Crss - 27 43 pF
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ELECTRICAL CHARACTERISTICS
JCS18N50FH
Parameter
Symbol
Tests conditions
Min Typ Max Units
Switching –Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time
td(on) tr td(off)
VDD=250V,ID=18A,RG=25Ω (note 4,5)
- 53 130 ns - 169 350 ns - 97 200 ns
Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
tf
Qg VDS =400V , Qgs ID=18A Qgd VGS =10V(note 4,5)
- 85 195 ns - 50 60 nC - 12.5 - nC - 22 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS - - 18 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
- - 72 A
Maximum Continuous Drain-Source VSD Diode F.