JCS7N80H

N R N-CHANNEL MOSFET JCS7N80H MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 7A 800 V 1.8Ω (MAX) 39.2nC( Typ.)   APPLICATIONS  Switched mode power suppliesy  Electronic ballast   Crss ( 13pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes JCS7N80CH-O-C-N-B JCS7N80FH-O-F-N-B Marking JCS7N80CH JCS7N80FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) ：201304A 1/14 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） EAS IAR （ 1） Repetitive Avalanche Energy （note 1） EAR （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature TL for Soldering Purposes * *Drain current limited by maximum junction temperature 800 7 4.4 28 ±30 570 7.0 30 4.3 195 1.72 -55～+150 300 JCS7N80H Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201402A 2/10 R ELECTRICAL CHARACTERISTICS JCS7N80H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS...