JCS4N80H

N R N-CHANNEL MOSFET JCS4N80H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ z z z LED 4A 800 V 2.5 Ω 14nC APPLICATIONS z High frequency switch mode power supply z Electronic ballasts z LED power supply z z Crss ( 9pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS4N80CH-O-C-N-B JCS4N80FH-O-F-N-B JCS4N80CH JCS4N80FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) ：201510C 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS4N80H Parameter Symbol JCS4N80CH Value JCS4N80FH － Drain-Source Voltage VDSS 800 Drain Current -continuous ID T=25℃ T=100℃ 4 2.5 4* 2.5* （ 1） Drain Current - pulse （note 1） IDM 16 16* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 230 （ 1） Avalanche Current（note 1） IAR 4 （ 1） Repetitive Avalanche Energy EAR （note 1） 11.0 （ 3） Peak Diode Recovery dv/dt dv/dt 4.5 （note 3） Power Dissipation PD TC=25℃ -Derate above 25℃ 100 1.28 33 0.43 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature TL for Soldering Purposes 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201510C 2/10 R ELECTRICAL CHARACTERISTICS JCS4N80H Parameter Symbol Tests conditio...