JCS10N70H

N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID 10A VDSS 700 V Rdson（@Vgs=10V） 1.10 Ω Qg 55.0nC z z z UPS APPLICATIONS z High frequency switch mode power supply z Electronic ballasts z UPS        z z Crss ( 10pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS10N70CH JCS10N70FH Marking JCS10N70CH JCS10N70FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) ：201406D 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS10N70H Parameter － Drain-Source Voltage Drain Current -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Energy（note 1） Symbol VDSS ID T=25℃ T=100℃ IDM VGSS EAS IAR EAR Value JCS10N70CH JCS10N70FH 700 700 10 10* 6.3 6.3* 40 40* ±30 338 10 23.9 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 5 Power Dissipation PD TC=25℃ -Derate above 25℃ 245 2.0 80 2.16 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201406D 2/10 R ELECTRICAL CHARACTERISTICS JCS10N70H Parameter Symbol Tests conditions Min Typ Max Units Off...