N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS2N70H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (Vgs=10V) Qg-typ
UPS
2A 70...
Description
N R N-CHANNEL MOSFET
JCS2N70H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (Vgs=10V) Qg-typ
UPS
2A 700 V
6.5 Ω
8.0nC
APPLICATIONS High efficiency switch
mode power supplies Electronic lamp ballasts
based on half bridge UPS
Crss ( 5pF) dv/dt RoHS
FEATURES Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
TO-126F
ORDER MESSAGE
Order codes
Marking
Package
JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-R-N-A JCS2N70CH-O-C-N-B JCS2N70FH-O-F-N-B
JCS2N70MFH JCS2N70VH JCS2N70RH JCS2N70RH JCS2N70CH JCS2N70FH
TO-126F IPAK DPAK DPAK
TO-220C TO-220MF
Halogen Free
NO NO NO NO NO NO
Packaging
Tube Tube Tube Brede Tube Tube
Device Weight 1.50 g(typ) 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ)
:201510D
1/13
R JCS2N70H
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value JCS2N70VH/RH/MFH JCS2N70CH
JCS2N70FH
- Drain-Source Voltage
VDSS
700 700 700
Drain Current -continuous
ID T=25℃ T=100℃
2 1.3
2 2* 1.3 1.3*
( 1)
Drain Current - pulse (note 1)
IDM
8 8*
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
120
( 1) Avalanche Current(note 1) IAR
1.9
( 1)
Repetitive Avalanche Current EAR (note 1)
4.4
( 3) Peak Diode Recovery dv/dt
dv/dt
4.5
(note 3)
Power Dissipation
PD TC=25℃ -Derate above 25℃
44 0.35
54 23 0.43 0.18
Operating and Storage Temperature...
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