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JCS15N60FH

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson(@Vgs=10V) 0.52 Ω Qg 36.0 nC ...


JILIN SINO-MICROELECTRONICS

JCS15N60FH

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Description
N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson(@Vgs=10V) 0.52 Ω Qg 36.0 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 23pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS15N60CH-O-C-N-B JCS15N60FH-O-F-N-B JCS15N60CH-R-C-N-B JCS15N60FH-R-F-N-B JCS15N60CH JCS15N60FH JCS15N60CH JCS15N60FH Package TO-220C TO-220MF TO-220C TO-220MF Halogen Free NO NO YES YES Packaging Tube Tube Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) 2.15 g(typ) 2.20 g(typ) :201112B 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS15N60H Parameter Symbol - Drain-Source Voltage Drain Current -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current(note 1) VDSS ID T=25℃ T=100℃ IDM VGSS EAS IAR EAR Value JCS15N60CH JCS15N60FH Unit 600 600 V 15 15* A 9.5 9.5* A 60 60* A ±30 V 245 mJ 15 A 23.9 mJ ( 3) Peak Diode Recovery dv/dt(note 3) dv/dt 9.8 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature ...




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