N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS15N60H
MAIN CHARACTERISTICS
Package
ID 15 A VDSS 600 V Rdson(@Vgs=10V) 0.52 Ω Qg 36.0 nC
...
Description
N R N-CHANNEL MOSFET
JCS15N60H
MAIN CHARACTERISTICS
Package
ID 15 A VDSS 600 V Rdson(@Vgs=10V) 0.52 Ω Qg 36.0 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 23pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS15N60CH-O-C-N-B JCS15N60FH-O-F-N-B JCS15N60CH-R-C-N-B JCS15N60FH-R-F-N-B
JCS15N60CH JCS15N60FH JCS15N60CH JCS15N60FH
Package
TO-220C TO-220MF TO-220C TO-220MF
Halogen
Free NO NO YES YES
Packaging
Tube Tube Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ) 2.15 g(typ) 2.20 g(typ)
:201112B
1/10
R
ABSOLUTE RATINGS (Tc=25℃)
JCS15N60H
Parameter
Symbol
- Drain-Source Voltage
Drain Current -continuous
( 1)
Drain Current - pulse
(note 1)
Gate-Source Voltage
( 2)
Single Pulsed Avalanche Energy(note
2)
( 1)
Avalanche Current(note 1)
( 1)
Repetitive Avalanche Current(note 1)
VDSS ID T=25℃ T=100℃ IDM
VGSS
EAS
IAR
EAR
Value JCS15N60CH JCS15N60FH
Unit
600 600 V
15 15* A
9.5 9.5* A
60 60* A
±30 V
245 mJ
15 A 23.9 mJ
( 3) Peak Diode Recovery dv/dt(note 3)
dv/dt
9.8 V/ns
Power Dissipation
PD TC=25℃ -Derate above
25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
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