N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS2N65C
MAIN CHARACTERISTICS
ID 2.0 A VDSS 650 V Rdson(Vgs=10V) 5.0 Ω Qg 8.0 nC
Package
...
Description
N R N-CHANNEL MOSFET
JCS2N65C
MAIN CHARACTERISTICS
ID 2.0 A VDSS 650 V Rdson(Vgs=10V) 5.0 Ω Qg 8.0 nC
Package
LED
APPLICATIONS High efficiency switch
mode power supplies Electronic lamp ballasts
based on half bridge LED power supplies
Crss ( 3.8pF) dv/dt RoHS
FEATURES Low gate charge Low Crss (typical 3.8pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS2N65TC-O-T-N-B JCS2N65VC-O-V-N-B JCS2N65RC-O-R-N-B JCS2N65CC-O-C-N-B JCS2N65FC-O-F-N-B JCS2N65FC-O-F2-NB
JCS2N65T JCS2N65V JCS2N65R JCS2N65C JCS2N65F JCS2N65F
Package
TO-92 IPAK DPAK TO-220C TO-220MF TO-220MF -K2
Halogen Free Packaging
NO NO NO NO NO NO
Brede Tube Tube Tube Tube Tube
Device Weight 0.22 g(typ) 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 2.20 g(typ)
:201412B
1/19
R
ABSOLUTE RATINGS (Tc=25℃)
JCS2N65C
Parameter
Symbol
JCS2N65 VC/RC
Value JCS2N65 JCS2N65
CC FC
JCS2N65 TC
-
VDSS
650
Drain-Source Voltage
Drain Current-continuous
ID T=25℃ T=100℃
1.9 1.1
2.0 1.3
2.0* 1.3*
( 1)
Drain Current – pulse
IDM
(note 1)
6.0
6.0*
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche
EAS
110
Energy(note 2)
( 1)
Avalanche Current(note IAR 1)
1.9
( 1)
Repetitive Avalanche Current (note 1)
EAR
4.2
( 3) Peak Diode Recovery
dv/dt
4.6
dv/dt (note 3)
Operating and Storage T ,TJ STGB B
-55~+150
Temperature Range
*
*Drain current...
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