1450PT

SEMICONDUCTOR 74.0 (2.91) DIA. Max. l 1450PT Series RRooHHSS D TYPE 20 3.5 ( 0.14 ) 47.0 (1.85) DIA. Max. DIA. 27.6 ( 1.09 ) Max. All dimensions in millimeters ( inches ) Instantaneous on-state voltage , V Max. On-state dissipation , W SEMICONDUCTOR Fig. 1 Peak on-state voltage Vs. Peak on-state Current 3 2.5 2 Tj = 125 C 1.5 1 0.5 100 1000 10000 Instantaneous on-state current , A Transient thermal impedance , C / W 1450PT Series RRooHHSS Fig. 2 Max. Junction to heatsink thermal impedance Vs. Time 0.025 0.02 0.015 0.01 0.005 0 0.001 0.01 0.1 Time , S 1 10 3500 3000 2500 2000 Fig. 3 Max. Power Dissipation Vs. Mean on-state Current 180 120 0 180 90 60 Conduction Angle 30 1500 1000 500 0 0 500 1000 1500 2000 Mean on-state current , A 3500 3000 Fig. 5 Y60KPE Max. Power Dissipation Vs. Mean on-state Current 360 DC 270 2500 2000 1500 180 Conduction Angle 120 90 60 30 1000 500 0 0 500 1000 1500 2000 2500 Mean on-state current , A Case temperature , C Case temperature , C Fig. 4 Max. heatsink Temperature Vs. Mean on-state Current 140 120 0 180 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 500 1000 1500 2000 Mean on-state current , A 2500 Fig. 6 Y60KPE Max. heatsink Temperature Vs. Mean on-state Current 140 360 120 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 270 DDC 800 1600 2400 Mean on-state current , A 3200 Max. On-state dissipation , W www.nellsemi.com Page 2 of 2 ...