STACK SILICON DIFFUSED DIODE
SEMICONDUCTOR
TECHNICAL DATA
E65A37VBS, E65A37VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICA...
Description
SEMICONDUCTOR
TECHNICAL DATA
E65A37VBS, E65A37VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=65A. Zener Voltage : 37V(Typ.)
POLARITY E65A37VBS (+ Type) E65A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current Peak 1 Cycle Surge Current
IF(AV) IFSM
Non-Repetitive Peak Reverse Surge Current (10mS)
IRSM
Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature
VRSM VRM
Tj
Storage Temperature Range
Tstg
RATING 65
450 (60Hz)
65
32 32 -40 215 -40 215
UNIT A A
A
V V
A
K H
EI JD
DIM A B C D E F
G H I J K
MILLIMETERS Φ11.5 MAX
Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2
TYP 0.5 Φ10.0+_ 0.2 0.4 +_ 0.1x45
8.5 MAX
0.2+0.1 28.35+_ 0.5
F
G B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Zener Voltage
VF VZ
Reverse Current
IR
Transient Thermal Resistance Breakdown Voltage Reverse Leakage Current Under High Temperature
VF Vbr
HIR
Temperature Resistance
Rth
TEST CONDITION IFM=100A IZ=10mA VR=32V IFM=100A, IM=100mA, Pw=100mS Irsm=65A, Pw=10mS
Ta=150 , VR=32V
DC total junction to case
MIN. 34 -
-
-
TYP. 37 -
-
-
MAX. 1.08 40 0.3 50 54
UNIT V V A mV V
100 A
0.5 /W
2004. 3. 11
Revision No : 0
1/1
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