E50A37VBS

SEMICONDUCTOR TECHNICAL DATA E50A37VBS, E50A37VBR STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Zener Voltage : 37V(Typ.) POLARITY E50A37VBS (+ Type) E50A37VBR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Reverse Surge Current (Pulse width=10mS) IF(AV) IFSM IRSM Transient Peak Reverse Voltage VRSM Peak Reverse Voltage Junction Temperature VRM Tj Storage Temperature Range Tstg RATING 50 300 (60Hz) 50 34 32 -40 215 -40 215 UNIT A A A V V A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.5 F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Zener Voltage VZ Reverse Current IR Transient Thermal Resistance Breakdown Voltage VF Vbr Temperature Coefficient Reverse Leakage Current Under High Temperature T HIR Temperature Resistance Rth TEST CONDITION IFM=100A IZ=10mA VR=32V IFM=100A, IM=100mA, Pw=100mS Irsm=50A, Pw=10mS IZ=10mA Ta=150 , VR=32V DC total junction to case MIN. 34 - - - TYP. 37 27 - - MAX. 1.10 40 10 60 55 - UNIT V V A mV V mV/ 100 A 0.6 /W 2002. 1. 30 Revision No : 1 1/1 ...