STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STP3NA60 STP3NA60FI
VDSS
600 V 600 V
...
STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE
STP3NA60 STP3NA60FI
VDSS
600 V 600 V
RDS(on)
<4Ω <4Ω
ID
2.9 A 2.1 A
s TYPICAL RDS(on) = 3.3 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
3 2 1
TO-220
3 2 1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NA60
STP3NA60FI
600
600
± 30
2.9 2.1
1.8 1.3
11.6
11.6
80 40
0.64
0.32
2000
-65 to 150
150
Unit
V V V A ...