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FDMS3606S Dataheets PDF



Part Number FDMS3606S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Asymmetric Dual N-Channel MOSFET
Datasheet FDMS3606S DatasheetFDMS3606S Datasheet (PDF)

FDMS3606S PowerTrench® Power Stage FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and re.

  FDMS3606S   FDMS3606S


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