Asymmetric Dual N-Channel MOSFET
FDMS3606S PowerTrench® Power Stage
FDMS3606S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-C...
Description
FDMS3606S PowerTrench® Power Stage
FDMS3606S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
December 2012
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load Notebook VCORE
Pin 1
Pin 1
G1
D1 D1 D1
D1
PHASE (S1/D2)
G2
S2
S2
S2
Top Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited)
-Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5 S2 6 S2 7 ...
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