P2003BVG

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2003BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 20m ID 8A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM PD Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL G : GATE D : DRAIN S : SOURCE LIMITS 30 ±20 8 6 32 2.5 1.6 -55 to 150 275 UNITS V V A W °C MAXIMUM 50 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V LIMITS UNIT MIN TYP MAX 30 1 1.5 2.5 V ±100 nA 1 µA 10 8A 1 JUL-25-2005 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2003BVG SOP-8 Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 6A VGS = 10V, ID = 8A VDS = 15V...