Parallel NOR Flash Embedded Memory
64Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W640GH, M29W640GL M29W640GT, M29W640...
Description
64Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W640GH, M29W640GL M29W640GT, M29W640GB
Features
Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VPP = 12V for fast program (optional)
Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random access: 60ns, 70ns, 90ns
Fast program commands – 2-word/4-byte program (without VPP = 12V) – 4-word/8-byte program (with VPP = 12V) – 16-word/32-byte write buffer
Programming time – 10µs per byte/word TYP – Chip program time: 10 s (4-word program) – Double word/quadruple byte program
Memory organization – M29W640GH/L 128 main blocks, 64KB each – M29W640GT/B 127 main blocks, 64KB each and 8 boot blocks, 8KB each
Program/erase controller – Embedded byte/word program algorithms
Program/erase suspend and resume – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation
Hardware block protection – VPP/WP# pin for fast program and write protect – Temporary block unprotect mode
Common Flash interface – 64-bit security code
128-word extended memory block – Extra block used as security block or to store additional information
Low power consumption: Standby and automatic mode
100,000 PROGRAM/ERASE cycles per block Electronic signature
– Manufacturer code: 0020h Device summary: part number and device code
– M29W640GH: uniform, last block protected by VPP/WP#
– 227Eh + 220Ch + 2201h – M29W640G...
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