M29W640GH

M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) „ Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60 ns, 70 ns, 90 ns „ Fast program commands – 2-word/4-byte program (without VPP=12 V) – 4-word/8-byte program (with VPP=12 V) – 16-word/32-byte write buffer „ Programming time – 10 μs per byte/word typical – Chip program time: 10 s (4-word program) „ Memory organization – M29W640GH/L: 128 main blocks, 64 Kbytes each – M29W640GT/B Eight 8-Kbyte boot blocks (top or bottom) 127 main blocks, 64 Kbytes each „ Program/erase controller – Embedded byte/word program algorithms „ Program/erase suspend and resume – Read from any block during program suspend – Read and program another block during erase suspend TSOP48 (NA) 12 x 20 mm FBGA TSOP56 (NB) 14 x 20 mm(1) BGA FBGA TFBGA48 (ZA) 6 x 8 mm FBGA64 (ZS) 11 x 13 mm TBGA64 (ZF) 10 x 13 mm(1) 1. Packages only available upon request. „ RoHS compliant packages „ 128-word extended memory block „ Low power consumption:standby and automatic standby „ Unlock Bypass Program command – Faster production/batch programming „ Common flash interface: 64-bit security code „ VPP/WP pin for fast program and write protect „ Temporary block unprotection mode „ 100,000 program/erase cycles per block „ Electronic signature –...