Darlington
2SB1659
(70Ω) E B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589...
Darlington
2SB1659
(70Ω) E B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2589) Application : Audio, Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-25(TO220)
Symbol VCBO VCEO VEBO
2SB1659 –110 –110 –5
Unit V V V
Symbol ICBO IEBO V(BR)CEO
Conditions VCB=–110V
VEB=–5V IC=–30mA
2SB1659 –100max –100max –110min
Unit µA µA V
IC
–6
A hFE
VCE=–4V, IC=–5A
5000min∗
IB
–1
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
V
PC
50(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–5mA
–3.0max
V
Tj
150 °C fT
VCE=–12V, IE=0.5A
100typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
110typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg
tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs) (µs)
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ
12.0min 4.0max
16.0±0.7 8.8±0.2
3.0±0.2
10.2±0.2
4.8±0.2 2.0±0.1
a ø3.75±0.2 b
1.35
0.65
+0.2 -0.1
2.5 2.5 BCE
1.4
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Collector Current IC(A) –320˚51˚C2C(5˚(CCCa (asseCeaTTseeemTmpe)p)mp)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Collector Current IC(A) –5mA –1mA
I C– V CE Characteristics (Typical)
–6
–0. –0
5mA .4mA
–0.3mA
–0.2mA –4
IB=–0.1mA –2
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=...
