DatasheetsPDF.com

1N8156 Dataheets PDF



Part Number 1N8156
Manufacturers Microsemi
Logo Microsemi
Description Low-Capacitance Transient Voltage Suppressors
Datasheet 1N8156 Datasheet1N8156 Datasheet (PDF)

1N8149 – 1N8182 Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of.

  1N8156   1N8156



Document
1N8149 – 1N8182 Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES  High surge current and peak pulse power unidirectional protection for sensitive circuits.  Very low capacitance for high frequency or high baud rate applications.  Bidirectional capability with two devices in anti-parallel (see Figure 5).  Triple-layer passivation.  Internal “Category 1” metallurgical bonds.  Voidless hermetically sealed glass package.  RoHS compliant versions are available. APPLICATIONS / BENEFITS  High reliability transient protection.  Extremely robust construction.  Working peak “standoff” voltage (VWM) from 6.8 to 170 volts.  Available as 150 W peak pulse power (PPP) at 10/1000 µs.  Lowest available capacitance for 150 W rated TVS.  ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.  Secondary lightning protection per select levels in IEC61000-4-5.  Flexible axial-leaded mounting terminals.  Nonsensitive to ESD per MIL-STD-750 method 1020.  Inherently radiation hard as described in Microsemi MicroNote 050. “A” Package Also available in: “A” MELF package (surface mount) 1N8149US – 1N8182US MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Capacitance at zero volts Thermal Resistance junction to ambient Peak Pulse Power at 25 oC (10µs/1000µs) Impulse repetition rate (duty factor) Steady State (Average) Power @ TA = 25 oC Solder Temperature (10 s maximum) Symbol TJ and TSTG C RθJA PPP d.f PM(AV) Value -55 to +175 4 150 150 0.01 1.0 260 Unit oC pF oC/W W % W oC Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 1 of 6 1N8149 – 1N8182 MECHANICAL and PACKAGING  CASE: Hermetically sealed voidless hard glass with tungsten slugs.  TERMINALS: Axial-leads are tin/lead or RoHS compliant matte/tin plating over copper.  MARKING: Body paint and part number  POLARITY: Cathode band  MOUNTING: Any position  TAPE & REEL option: Standard per EIA-296.  WEIGHT: Approximately 340 milligrams.  See Package Dimensions on last page. Reliability Level Blank = Commercial MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) MS (reference JANS) Type number (see Electrical Characteristics table) PART NOMENCLATURE MQ 1N8149 (e3) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Symbol V(BR) V(BR) VWM ID I(BR) IPP VC PPP CT VWIB IIB SYMBOLS & DEFINITIONS Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Breakdown Current: The current used for measuring Breakdown Voltage V(BR) Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (IPP) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of IPP and VC. Total Capacita.


1N8155 1N8156 1N8157


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)