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APT75DL60BG

Microsemi

Ultrasoft Recovery Rectifi er Diode

APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Di...


Microsemi

APT75DL60BG

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Description
APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Applications - Induction Heating Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES Ultrasoft Recovery Times (trr) Popular TO-247 Package or Surface Mount D3PAK Package PRODUCT BENEFITS Soft Switching - High Qrr Low Noise Switching - Reduced Ringing Ultra Low Forward Voltage Higher Reliability Systems Low Leakage Current Minimizes or eliminates snubber (B) TO-247 D3PAK 1 2 (S) 12 12 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Characteristic / Test Conditions Ratings Unit VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 112°C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 600 75 121 320 -55 to 175 300 Volts Amps °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions VF Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V IF = 75A IF = 150A IF = 75A, TJ = 125°C VR = 600V VR = 600V, T...




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