PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
1 July 2015
Product data sheet
1. General description
P...
PMEG3010ESB
30 V, 1 A low VF MEGA
Schottky barrier rectifier
1 July 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 30 V Low forward voltage, typical: VF = 495 mV Low reverse current, typical: IR = 12 µA Package height typ. 270 µm
3. Applications
Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application
4. Quick reference data
Table 1. Symbol IF(AV)
VR VF
Quick reference data Parameter average forward current
reverse voltage
forward voltage
IR reverse current
Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
Min Typ Max Unit - - 1A
- - 30 V - 495 565 mV
-
1.6 5
µA
- 12 45 µA
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NXP Semiconductors
PMEG3010ESB
30 V, 1 A low VF MEGA
Schottky barrier rectifier
5. Pinning information
Table 2. Pin 1 2
Pinning information Symbol Description K cathode[1] A anode
Simplified outline
12
Graphic symbol
1
2
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