Diode
TOSHIBA Diodes for Protecting against ESD
DF2B6.8CT
DF2B6.8CT
Product for Use Only as Protection against Electrostatic...
Description
TOSHIBA Diodes for Protecting against ESD
DF2B6.8CT
DF2B6.8CT
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
0.6±0.05
Unit in mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation Junction temperature Storage temperature range
Symbol
P Tj Tstg
Rating
150* 150 −55 to 150
Unit
mW °C °C
0.38
+0.02 -0.03
0.5±0.03 0.05±0.03
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
CST2
JEDEC JEITA TOSHIBA
― ― 1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse stand-off voltage Reverse breakdown voltage Reverse current...
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