ESD Protection Diodes
ESD Protection Diodes Silicon Epitaxial Planar
DF2B6.8M2SC
DF2B6.8M2SC
1. Applications
• ESD Protection
Note: This pro...
Description
ESD Protection Diodes Silicon Epitaxial Planar
DF2B6.8M2SC
DF2B6.8M2SC
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1 2: Pin 2
SC2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2012-08-21 Rev.3.0
4. Electrical Characteristics (Unless otherwise specified, Ta = 25)
VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance
DF2B6.8M2SC
Fig. 4.1...
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