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IRGP4690DPBF Dataheets PDF



Part Number IRGP4690DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4690DPBF DatasheetIRGP4690DPBF Datasheet (PDF)

IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 75A Applications • Industrial Motor Drive • Inverters • UPS • Welding G E n-channel G Gate GC E TO-247AC IRGP4690DPbF C Collector GC E TO-247AD IRGP4690D-EP E Emitter Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficien.

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IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 75A Applications • Industrial Motor Drive • Inverters • UPS • Welding G E n-channel G Gate GC E TO-247AC IRGP4690DPbF C Collector GC E TO-247AD IRGP4690D-EP E Emitter Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4690DPbF IRGP4690D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4690DPbF IRGP4690D-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM ILM Continuous Collector Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current fDiode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA Parameter dJunction-to-Case (IGBT) dJunction-to-Case (Diode) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Max. 600 140 90 225 300 70 45 300 ±20 ±30 454 227 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Max. 0.33 1.0 ––– 40 Units V A V W °C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. V(BR)CES ΔV(BR)CES/ΔTJ Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage 600 — — VCE(on) Collector-to-Emitter Saturation Voltage — — VGE(th) ΔVGE(th)/ΔTJ gfe Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance 4.0 — — ICES Collector-to-Emitter Leakage Current — — VFM Diode Forward Voltage Drop — — IGES Gate-to-Emitter Leakage Current — Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Qg Total Gate Charge Qge Gate-to-Emitter Charge Qgc Gate-to-Collector Charge Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etotal Total Switching Loss td(on) Turn-On delay time tr Rise time td(off) Turn-Off delay time tf Fall time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etotal Total Switching Loss td(on) Turn-On delay time tr Rise time td(off) Turn-Off delay time tf Fall time Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance — — — — — — — — — — — — — — — — — — — — Typ. — 0.30 1.70 2.0 2.1 — -21 50 1.0 1040 2.23 1.8 — Typ. 150 40 60 2465 2155 4620 50 70 200 60 3870 2815 6685 50 70 240 70 4440 245 130 Max. — — 2.10 — — 6.5 — — 100 — 3.0 — ±200 Max. — — — — — — — — — — — — — — — — — — — — RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 —— Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — 470 — — 155 — — 27 — Units V V/°C V V mV/°C S μA V nA Conditions eVGE = 0V, IC = 100μA VGE = 0V, IC = 2.0mA (25°C-175°C) IC = 75A, VGE = 15V, TJ = 25°C IC = 75A, VGE = 15V, TJ = 150°C IC = 75A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 2.1mA VCE = VGE, IC = 2.1mA (25°C - 175°C) VCE = 50V, IC = 75A, PW = 60μs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 75A IF = 75A, TJ = 175°C VGE = ±20V Units nC IC = 75A VGE = 15V VCC = 400V Conditions μJ IC = 75A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, TJ = 25°C Energy losses include tail & diode gns reverse recovery μJ IC = 75A, VCC = 400V, VGE=15V RG=10Ω, L=200μH,TJ = 175°C Energy losses include tail & diode gns reverse recovery pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 300A VCC = 480V, Vp ≤ 600V Rg = 10Ω, VGE = +20V to 0V μs VCC = 400V, Vp ≤ 600V Rg = 10Ω, VGE = +15V to 0V μJ TJ = 175°C ns VCC = 400V, IF = 75A A VGE = 15V, Rg = 10Ω, L =60μH Notes:  VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Pulse width limited by max. junction temperature. … Values influenced by parasitic L and C in measuremen.


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