Document
IRGP4690DPbF IRGP4690D-EPbF
VCES = 600V IC = 90A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V @ IC = 75A
Applications • Industrial Motor Drive • Inverters • UPS • Welding
G
E
n-channel
G Gate
GC E TO-247AC IRGP4690DPbF
C Collector
GC E TO-247AD IRGP4690D-EP
E Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme Environmentally friendly
Base part number
IRGP4690DPbF IRGP4690D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4690DPbF IRGP4690D-EPbF
Absolute Maximum Ratings
Parameter
VCES Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C ICM ILM
Continuous Collector Current Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C IFM
Diode Continous Forward Current
fDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT) RθJC (Diode) RθCS RθJA
Parameter
dJunction-to-Case (IGBT) dJunction-to-Case (Diode)
Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount)
Max. 600 140 90 225 300 70 45 300 ±20
±30 454 227 -55 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Min. ––– ––– ––– –––
Typ. ––– ––– 0.24 –––
Max. 0.33 1.0 ––– 40
Units V
A
V W °C
Units °C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP4690DPbF/IRGP4690D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)CES ΔV(BR)CES/ΔTJ
Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage
600 — —
VCE(on)
Collector-to-Emitter Saturation Voltage
— —
VGE(th) ΔVGE(th)/ΔTJ gfe
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance
4.0 — —
ICES Collector-to-Emitter Leakage Current
— —
VFM Diode Forward Voltage Drop
— —
IGES Gate-to-Emitter Leakage Current
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Qg Total Gate Charge
Qge Gate-to-Emitter Charge
Qgc Gate-to-Collector Charge
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
— — — — — — — — — — — — — — — — — — — —
Typ. — 0.30 1.70 2.0 2.1 — -21 50 1.0 1040 2.23 1.8 —
Typ. 150 40 60 2465 2155 4620 50 70 200 60 3870 2815 6685 50 70 240 70 4440 245 130
Max. — — 2.10 — — 6.5 — — 100 — 3.0 — ±200
Max. — — — — — — — — — — — — — — — — — — — —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5 ——
Erec trr Irr
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
— 470 — — 155 — — 27 —
Units V
V/°C
V
V mV/°C
S μA
V
nA
Conditions
eVGE = 0V, IC = 100μA
VGE = 0V, IC = 2.0mA (25°C-175°C) IC = 75A, VGE = 15V, TJ = 25°C IC = 75A, VGE = 15V, TJ = 150°C IC = 75A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 2.1mA VCE = VGE, IC = 2.1mA (25°C - 175°C) VCE = 50V, IC = 75A, PW = 60μs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 75A IF = 75A, TJ = 175°C VGE = ±20V
Units nC
IC = 75A VGE = 15V VCC = 400V
Conditions
μJ IC = 75A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, TJ = 25°C Energy losses include tail & diode
gns reverse recovery
μJ IC = 75A, VCC = 400V, VGE=15V RG=10Ω, L=200μH,TJ = 175°C Energy losses include tail & diode
gns reverse recovery
pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 300A VCC = 480V, Vp ≤ 600V Rg = 10Ω, VGE = +20V to 0V
μs VCC = 400V, Vp ≤ 600V Rg = 10Ω, VGE = +15V to 0V
μJ TJ = 175°C ns VCC = 400V, IF = 75A A VGE = 15V, Rg = 10Ω, L =60μH
Notes: VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measuremen.