IRGP4650DPbF IRGP4650D-EPbF
VCES = 600V IC = 50A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REC...
IRGP4650DPbF IRGP4650D-EPbF
VCES = 600V IC = 50A, TC = 100°C
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 35A
Applications Industrial Motor Drive Inverters UPS Welding
G
E
n-channel
G Gate
GC E TO-247AC IRGP4650DPbF
C Collector
GC E TO-247AD IRGP4650D-EP
E Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme Environmentally friendly
Base part number
IRGP4650DPbF IRGP4650D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4650DPbF IRGP4650D-EPbF
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Thermal Resistance
RθJC (IGBT) RθJC (Diode) RθCS RθJA
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current Diode Continous Forward Current
fDiode Maximum Forward Current
Continuous...