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IRGP4266D-EPbF

Part Number	IRGP4266D-EPbF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 8, 2016
Detailed Description	IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Re...
Datasheet	IRGP4266D-EPbF PDF File

Overview

IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.
5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Bas...

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IRGP4266D-EPbF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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