IRGP4266DPbF

  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF  TO‐247AC  C Collector E GC IRGP4266D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Base part number IRGP4266DPbF IRGP4266D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4266DPbF IRGP4266D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 140 90 300 300 68 42 ±20...