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IRGIB15B60KD1P

INSULATED GATE BIPOLAR TRANSISTOR

Description

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature Rated a...

International Rectifier

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