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IRGIB10B60KD1P Dataheets PDF



Part Number IRGIB10B60KD1P
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGIB10B60KD1P DatasheetIRGIB10B60KD1P Datasheet (PDF)

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits • Benchmark Efficie.

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IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Base part number IRGIB10B60KD1P Package Type TO-220AB Full- Pak Standard Pack Form Quantity Tube 50 Orderable Part Number IRGIB10B60KD1P Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 10 A ICM ILM Pulse Collector Current (Ref.Fig.C.T.5) c Clamped Inductive Load current 32 32 IF @ TC = 25°C Diode Continuous Forward Current 16 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 32 VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V VGE Gate-to-Emitter Voltage ±20 PD @ TC = 25°C Maximum Power Dissipation 44 W PD @ TC = 100°C Maximum Power Dissipation 22 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight ––– ––– 3.4 ––– ––– 5.3 °C/W ––– 0.50 ––– ––– ––– 62 ––– 2.0 ––– g 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 4, 2015 IRGIB10B60KD1P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500μA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.99 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) 1.50 1.70 2.10 IC = 10A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Voltage — 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150°C — 2.06 2.35 IC = 10A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250μA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) gfe Forward Transconductance — 5.0 — S VCE = 50V, IC = 10A, PW = 80μs — 1.0 150 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current — 90 250 μA VGE = 0V, VCE = 600V, TJ = 150°C — 150 400 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.80 2.40 V IF = 5.0A, VGE = 0V — 1.32 1.74 IF = 5.0A, VGE = 0V, TJ = 150°C — 1.23 1.62 IF = 5.0A, VGE = 0V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 41 62 IC = 10A Qge Gate-to-Emitter Charge (turn-on) — 4.6 6.9 nC VCC = 400V Qgc Gate-to-Collector Charge (turn-on) — 19 29 VGE = 15V Eon Turn-On Switching Loss — 156 264 IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss Etot Total Switching Loss — — 165 273 321 434 d μJ VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 25°C td(on) Turn-On delay time — 25 33 IC = 10A, VCC = 400V tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.1mH td(off) Turn-Off delay time — 180 250 Ls= 150nH, TJ = 25°C tf Fall time — 62 87 Eon Turn-On Switching Loss — 261 372 IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss Etot Total Switching Loss — — 313 425 574 694 d μJ VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C td(on) Turn-On delay time — 22 31 IC = 8.0A, VCC = 400V tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.07mH td(off) Turn-Off delay time — 240 340 Ls= 150nH, TJ = 150°C tf Fall time — 48 67 LE Internal Emitter Inductance — 7.5 — nH Measured 5 mm from package Cies Input Capacitance — 610 915 VGE = 0V Coes Output Capacitance — 66 99 pF VCC = 30V Cres Reverse Transfer Capacitance — 23 35 f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50Ω SCSOA Short Circuit Safe Operating Area 10 — — μs TJ = 150°C, Vp = 600V, RG = 50Ω VCC=360V,VGE = +15V to 0V ISC (PEAK) Peak Short Circuit Collector Current — 100.


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