Document
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified
C
G E
n-channel
VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
TO-220 Full-Pak
Base part number IRGIB10B60KD1P
Package Type TO-220AB Full- Pak
Standard Pack
Form Quantity
Tube
50
Orderable Part Number IRGIB10B60KD1P
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
16
IC @ TC = 100°C Continuous Collector Current
10
A
ICM ILM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
32 32
IF @ TC = 25°C Diode Continuous Forward Current
16
IF @ TC = 100°C Diode Continuous Forward Current
10
IFM
Diode Maximum Forward Current
32
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
2500
V
VGE
Gate-to-Emitter Voltage
±20
PD @ TC = 25°C Maximum Power Dissipation
44
W
PD @ TC = 100°C Maximum Power Dissipation
22
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max. Units
RθJC RθJC RθCS RθJA Wt
Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
–––
–––
3.4
–––
–––
5.3
°C/W
–––
0.50
–––
–––
–––
62
–––
2.0
–––
g
1
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August 4, 2015
IRGIB10B60KD1P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.99 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
1.50 1.70 2.10
IC = 10A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Voltage
— 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150°C
— 2.06 2.35
IC = 10A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe
Forward Transconductance
— 5.0 — S VCE = 50V, IC = 10A, PW = 80μs
— 1.0 150
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— 90 250 μA VGE = 0V, VCE = 600V, TJ = 150°C
— 150 400
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
— 1.80 2.40 V IF = 5.0A, VGE = 0V
— 1.32 1.74
IF = 5.0A, VGE = 0V, TJ = 150°C
— 1.23 1.62
IF = 5.0A, VGE = 0V, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
— 41 62
IC = 10A
Qge
Gate-to-Emitter Charge (turn-on)
— 4.6 6.9 nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 19 29
VGE = 15V
Eon
Turn-On Switching Loss
— 156 264
IC = 10A, VCC = 400V
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
— —
165 273 321 434
d μJ VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 25°C
td(on)
Turn-On delay time
— 25 33
IC = 10A, VCC = 400V
tr
Rise time
— 24 34 ns VGE = 15V, RG = 50Ω, L = 1.1mH
td(off)
Turn-Off delay time
— 180 250
Ls= 150nH, TJ = 25°C
tf
Fall time
— 62 87
Eon
Turn-On Switching Loss
— 261 372
IC = 10A, VCC = 400V
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
— —
313 425 574 694
d μJ VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C
td(on)
Turn-On delay time
— 22 31
IC = 8.0A, VCC = 400V
tr
Rise time
— 24 34 ns VGE = 15V, RG = 50Ω, L = 1.07mH
td(off)
Turn-Off delay time
— 240 340
Ls= 150nH, TJ = 150°C
tf
Fall time
— 48 67
LE
Internal Emitter Inductance
— 7.5 — nH Measured 5 mm from package
Cies
Input Capacitance
— 610 915
VGE = 0V
Coes
Output Capacitance
— 66 99 pF VCC = 30V
Cres
Reverse Transfer Capacitance
— 23 35
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
SCSOA
Short Circuit Safe Operating Area
10 — — μs TJ = 150°C, Vp = 600V, RG = 50Ω
VCC=360V,VGE = +15V to 0V
ISC (PEAK)
Peak Short Circuit Collector Current
— 100.