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IRGB4059DPbF

Part Number	IRGB4059DPbF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Features	• Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square ...
Published	Mar 8, 2016
Datasheet	IRGB4059DPbF PDF File

Features

• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for 4X Rated Current (ILM)
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recover...

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IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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