IRGB4045DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES = 600V IC = 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE(on) typ. = 1.7V G Gate E C G TO-220AB C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current cPulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current dDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC =25° PD @ TC =100° TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJC RθCS RθJA...