VCES = 1200V IC = 60A, TC =100°C
IRG8P60N120KDPbF IRG8P60N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 40A
Applications Industrial Motor Drive UPS Solar Inverters Welding
G
E
n-channel
CE G
E GC
IRG8P60N120KDPbF IRG8P60N120KD‐EPbF
TO‐247AC
TO‐2...
