VCES = 1200V IC = 50A, TC =100°C
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast...
VCES = 1200V IC = 50A, TC =100°C
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
Industrial Motor Drive UPS Solar Inverters Welding
G
E
n-channel
GC E
GC E
IRG8P50N120KDPbF IRG8P50N120KD‐EPbF
TO‐247AC
TO‐247AD
G Gate
C Collector
E Emitter
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly
Base part number
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C
IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current
Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and ...